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Le informazioni sulla didattica, sulla ricerca e sui compiti istituzionali riportate in questa pagina sono certificate dall'Ateneo; ulteriori informazioni, redatte a cura del docente, sono disponibili sulla pagina web personale e nel curriculum vitae indicati nella scheda.
English
Informazioni
DocenteIelmini Daniele
QualificaProfessore ordinario a tempo pieno
Dipartimento d'afferenzaDipartimento di Elettronica, Informazione e Bioingegneria
Gruppo Scientifico DisciplinareIINF-01/A - Elettronica
Curriculum VitaeScarica il CV (402.7Kb - 01/12/2025)
OrcIDhttps://orcid.org/0000-0002-1853-1614

Contatti
Orario di ricevimento
DipartimentoPianoUfficioGiornoOrarioTelefonoFaxNote
Elettronica e Informazione, via Golgi 40 (Ed. 16)------VenerdìDalle 10:00
Alle 12:00		0223996120------
E-maildaniele.ielmini@polimi.it
Pagina web redatta a cura del docentehttps://ielmini.faculty.polimi.it

Fonte dati: RE.PUBLIC@POLIMI - Research Publications at Politecnico di Milano

Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2026 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Contributo in Atti di convegno
Scaling of Nonvolatile Memory (NVM) Technologies for Storage and Computing in Edge AI (Mostra >>)
Articoli su riviste
A fully integrated analogue closed-loop in-memory computing accelerator based on static random-access memory (Mostra >>)
Achieving high precision in analog in-memory computing systems (Mostra >>)
Experimental and numerical demonstration of threshold voltage asymmetry and synaptic plasticity in MoS2 transistors (Mostra >>)
In-memory analog computing for non-negative matrix factorization (Mostra >>)
Neuromorphic hardware based on memristive nanodevices for seizure detection and recovery (Mostra >>)
Technology Roadmap of Bioinspired Computing Hardware (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2025 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Brevetti
LOGICAL OPERATIONS IN MEMORY (Mostra >>)
METHOD FOR ENROLLING A PHYSICALLY UNCLONABLE FUNCTION, PUF, CIRCUIT FOR CRYPTOGRAPHIC APPLICATIONS (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Analog Circuit Design for In-Memory Linear Algebra Accelerators (Mostra >>)
Contributo in Atti di convegno
3D vertical resistive random-access memory (3D-VRRAM) for analog in-memory computing (Mostra >>)
Bio-Inspired Computing with Emerging Devices: Bridging 2D Materials and Neuromorphic Architectures (Mostra >>)
Fully-Parallel 2-Terminal Update Scheme for Tensor Product in ECRAM Arrays (Mostra >>)
In-memory reconstruction of compressively-sampled signals by nonlinear closed-loop analog circuits (Mostra >>)
Linear compensation of drift and mitigation of drift variations in PCM arrays for highly accurate, energy efficient in-memory computing (Mostra >>)
Multi-Partner Project: Architectures and Design Methodologies to Accelerate AI Workloads. The ICSC Flagship 2 Project (Mostra >>)
Articoli su riviste
3-D Crosspoint (3DXP) Memory Arrays With Subthreshold Operation for Low-Energy, High-Accuracy Neural Network Accelerators (Mostra >>)
3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing (Mostra >>)
A Survey on Deep Learning Hardware Accelerators for Heterogeneous HPC Platforms (Mostra >>)
Emerging Materials and Computing Paradigms for Temporal Signal Analysis (Mostra >>)
Energy-efficient memory materials (Mostra >>)
Enhancing RRAM Reliability: Exploring the Effects of Al Doping on HfO2-Based Devices (Mostra >>)
High-Accuracy, High-Performance In-Memory Computing With High-Resistance Spin-Orbit Torque (SOT) Magnetic Memory (Mostra >>)
Optoelectronic memristor based on a-C:Te film for muti-mode reservoir computing (Mostra >>)
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing (Mostra >>)
Seizure detection via reservoir computing in MoS2-based charge trap memory devices (Mostra >>)
The growing memristor industry (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2024 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Brevetti
MEMORY ARCHITECTURES WITH AMBIPOLAR SEMICONDUCTOR CHANNELS (Mostra >>)
Metodo per impostare un circuito Physically Unclonable Funcion, PUF, per applicazione crittografiche (Mostra >>)
SISTEMI E METODO PER L’ESECUZIONE RAPIDA DI MOLTIPLICAZIONI TRA MATRICI (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Development of Crosspoint Memory Arrays for Neuromorphic Computing (Mostra >>)
Contributo in Atti di convegno
Analytical Model for Parasitic Resistances of Crossbar Arrays Suitable for Open-loop Programming Schemes Reliability Analysis (Mostra >>)
Comparing Short and Long-term Reliability of HfO2 and Al: HfO2 RRAM Devices (Mostra >>)
Digital In-Memory Computing to Accelerate Deep Learning Inference on the Edge (Mostra >>)
Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators (Mostra >>)
High-Density Multilevel 3D Vertical Resistive Switching Memory (VRRAM) for Massively Parallel in-Memory Computing (Mostra >>)
Low-energy, high-accuracy convolutional network inference in 3D crosspoint (3DXP) arrays (Mostra >>)
Articoli su riviste
A Strong Physical Unclonable Function With Virgin State Embedded Phase Change Memory (Mostra >>)
Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural Networks (Mostra >>)
Differential Phase Change Memory (PCM) Cell for Drift-Compensated In-Memory Computing (Mostra >>)
Hardware implementation of memristor-based artificial neural networks (Mostra >>)
Hemispherical Retina Emulated by Plasmonic Optoelectronic Memristors with All‐Optical Modulation for Neuromorphic Stereo Vision (Mostra >>)
Memristive Materials, Devices, and Systems (MEMRISYS 2023) (Mostra >>)
Memristive tonotopic mapping with volatile resistive switching memory devices (Mostra >>)
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study (Mostra >>)
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling (Mostra >>)
Roadmap to neuromorphic computing with emerging technologies (Mostra >>)
Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2023 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Contributi su volumi (Capitolo o Saggio)
Memristive/CMOS devices for neuromorphic applications (Mostra >>)
Contributo in Atti di convegno
Accelerating massive MIMO in 6G communications by analog in-memory computing circuits (Mostra >>)
An SRAM-based reconfigurable analog in-memory computing circuit for solving linear algebra problems (Mostra >>)
An Ultrafast (< 200 ns) Sparse Solution Solver made by HfWOx/VOy Threshold Tunable Neurons (Mostra >>)
Closed-Loop In-Memory Computing for Energy-Efficient Matrix Eigendecomposition (Mostra >>)
Compact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences (Mostra >>)
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM) (Mostra >>)
In-memory neural network accelerator based on phase change memory (PCM) with one-selector/one-resistor (1S1R) structure operated in the subthreshold regime (Mostra >>)
NimbleAI: Towards Neuromorphic Sensing-Processing 3D-integrated Chips (Mostra >>)
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM (Mostra >>)
Thermal-Induced Multi-State Memristors for Neuromorphic Engineering (Mostra >>)
Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology (Mostra >>)
Articoli su riviste
A Generalized Block-Matrix Circuit for Closed-Loop Analog In-Memory Computing (Mostra >>)
A Multilayer Neural Accelerator With Binary Activations Based on Phase-Change Memory (Mostra >>)
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing (Mostra >>)
Binary‐Stochasticity‐Enabled Highly Efficient Neuromorphic Deep Learning Achieves Better‐than‐Software Accuracy (Mostra >>)
Hybrid 2D-CMOS microchips for memristive applications (Mostra >>)
In-Memory Computing for Machine Learning and Deep Learning (Mostra >>)
In-Memory Principal Component Analysis by Analogue Closed-Loop Eigendecomposition (Mostra >>)
In-memory computing with emerging memory devices: Status and outlook (Mostra >>)
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories (Mostra >>)
Process-Voltage-Temperature Variations Assessment in Energy-Aware Resistive RAM-Based FPGAs (Mostra >>)
Reservoir Computing with Charge-Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering (Mostra >>)
Threshold Switching by Bipolar Avalanche Multiplication in Ovonic Chalcogenide Glasses (Mostra >>)
Tunable synaptic working memory with volatile memristive devices (Mostra >>)


Elenco delle pubblicazioni e dei prodotti della ricerca per l'anno 2022 (Mostra tutto | Nascondi tutto)
Tipologia Titolo Pubblicazione/Prodotto
Brevetti
NANOWIRE-BASED DEVICE FOR IMPLEMENTING A RESERVOIR FOR A NEURAL NETWORK (Mostra >>)
Contributi su volumi (Capitolo o Saggio)
Analogue In-Memory Computing with Resistive Switching Memories (Mostra >>)
Computing with nonvolatile memories for artificial intelligence (Mostra >>)
Contributo in Atti di convegno
A Hybrid Memristor/CMOS SNN for Implementing One-Shot Winner-Takes-All Training (Mostra >>)
Characterization of reset state through energy activation study in Ge-GST based ePCM (Mostra >>)
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories (Mostra >>)
End-to-end modeling of variability-aware neural networks based on resistive-switching memory arrays (Mostra >>)
Experimental verification and benchmark of in-memory principal component analysis by crosspoint arrays of resistive switching memory (Mostra >>)
Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs (Mostra >>)
Interaction between forming pulse and integration process flow in ePCM (Mostra >>)
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference (Mostra >>)
Mitigating read-program variation and IR drop by circuit architecture in RRAM-based neural network accelerators (Mostra >>)
Modeling Environment for Ge-rich GST Phase Change Memory Cells (Mostra >>)
Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators (Mostra >>)
Status and challenges of in-memory computing for neural accelerators (Mostra >>)
Thermal switching of TiO2-based RRAM for parameter extraction and neuromorphic engineering (Mostra >>)
Monografie o trattati scientifici
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations (Mostra >>)
Articoli su riviste
2022 roadmap on neuromorphic computing and engineering (Mostra >>)
A CMOS-memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity (Mostra >>)
An analogue in-memory ridge regression circuit with application to massive MIMO acceleration (Mostra >>)
An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories (Mostra >>)
BEOL Process Effects on ePCM Reliability (Mostra >>)
Forming-Free Resistive Switching Memory Crosspoint Arrays for In-Memory Machine Learning (Mostra >>)
HfO2-based resistive switching memory devices for neuromorphic computing (Mostra >>)
In-Memory Principal Component Analysis by Crosspoint Array of Resistive Switching Memory: A New Hardware Approach for Energy-Efficient Data Analysis in Edge Computing (Mostra >>)
Invited Tutorial: Analog Matrix Computing with Crosspoint Resistive Memory Arrays (Mostra >>)
Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexity (Mostra >>)
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks (Mostra >>)
Memtransistor Devices Based on MoS 2 Multilayers with Volatile Switching due to Ag Cation Migration (Mostra >>)
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks (Mostra >>)
Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse (Mostra >>)
Redox memristors with volatile threshold switching behavior for neuromorphic computing (Mostra >>)
Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons (Mostra >>)
manifesti v. 3.14.6 / 3.14.6
Area Servizi ICT
09/08/2026